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to our customers, old company name in catalogs and other documents on april 1 st , 2010, nec electronics corporation merged with renesas technology corporation, and renesas electronics corporation took over all the business of both companies. therefore, although the old company name remains in this document, it is a valid renesas electronics document. we appreciate your understanding. renesas electronics website: http://www.renesas.com april 1 st , 2010 renesas electronics corporation issued by: renesas electronics corporation ( http://www.renesas.com ) send any inquiries to http://www.renesas.com/inquiry .
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rev.2.00, aug.01.2003, page 1 of 9 h5n3003p silicon n channel mos fet high speed power switching rej03g0007-0200z (previous ade-208-1547a(z)) rev.2.00 aug.01.2003 features ? low on-resistance ? low leakage current ? high speed switching outline to-3p 1 2 3 d s g 1. gate 2. drain (flange) 3. source
h5n3003p rev.2.00, aug.01.2003, page 2 of 9 absolute maximum ratings (ta = 25 c) item symbol ratings unit drain to source voltage v dss 300 v gate to source voltage v gss 30 v drain current i d 40 a drain peak current i d (pulse) note1 160 a body-drain diode reverse drain current i dr 40 a body-drain diode reverse drain peak current i dr (pulse) note1 160 a avalanche current i ap note3 30 a channel dissipation pch note2 150 w channel to case thermal impedance ch-c 0.833 c /w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. value at tc = 25 c 3. tch 150 c
h5n3003p rev.2.00, aug.01.2003, page 3 of 9 electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 300 ? ? v i d = 10ma, v gs = 0 zero gate voltage drain current i dss ??1 av ds = 300v, v gs = 0 gate to source leak current i gss ??0.1 av gs = 30v, v ds = 0 gate to source cutoff voltage v gs(off) 3.0 ? 4.0 v v ds = 10v, i d = 1ma forward transfer admittance |y fs | 2035? s i d = 20a, v ds = 10v note4 static drain to source on state resistance r ds(on) ? 0.058 0. 069 ? i d = 20a, v gs = 10v note4 input capacitance ciss ? 5150 ? pf v ds = 25v output capacitance coss ? 560 ? pf v gs = 0 reverse transfer capacitance crss ? 90 ? pf f = 1mhz turn-on delay time td(on) ? 60 ? ns i d = 20a rise time tr ? 185 ? ns r l = 7.5 ? turn-off delay time td(off) ? 220 ? ns v gs = 10v fall time tf ? 150 ? ns rg=10 ? total gate charge qg ? 130 ? nc v dd = 240v gate to source charge qgs ? 25 ? nc v gs = 10v gate to drain charge qgd ? 60 ? nc i d = 40a body?drain diode forward voltage v df ?1.01.5v i f = 40a, v gs = 0 body?drain diode reverse recovery time trr ? 280 ? ns i f = 40a, v gs = 0 dif/dt=100a/ s body?drain diode reverse recovery charge qrr ? 2.5 ? c notes: 4. pulse test
h5n3003p rev.2.00, aug.01.2003, page 4 of 9 main characteristics 200 150 100 50 0 50 100 150 200 300 100 30 10 3 1 13 10 30 100 300 1000 100 80 60 40 20 0 4 8 12 16 20 100 80 60 40 20 0 2468 10 0.3 0.1 1000 ta = 25 c 10 v v gs = 5 v 5.5 v tc = 75 c 25 c ?25 c channel dissipation pch (w) case temperature tc ( c) power vs. temperature derating drain to source voltage v ds (v) drain current i d (a) maximum safe operation area drain to source voltage v ds (v) drain current i d (a) typical output characteristics 100 s 1 ms pw = 10 ms (1shot) dc operation ( tc = 25 c) 10 s 6 v 7 v 8 v operation in this area is limited by r ds(on) gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics v ds = 10 v pulse test pulse test
h5n3003p rev.2.00, aug.01.2003, page 5 of 9 gate to source voltage v gs (v) drain to source saturation voltage vs. gate to source voltage drain to source saturation voltage v ds(on) (v) 5 4 3 2 1 0 48 12 16 20 1 5 20 100 21050 0.2 0.1 0.05 0.02 0.01 0.2 0.16 0.12 0.08 0.04 ?40 0 40 80 120 160 0 0.2 0.5 2 5 20 50 100 100 20 50 5 10 2 0.5 1 0.2 1 10 25 c tc = ?25 c 75 c v = 10 v gs 10 a 20 a i = 40 a d i = 40 a d 20 a 10 a v = 10 v,15 v gs pulse test drain to source on state resistance r ds(on) (?) static drain to source on state resistance vs. drain current drain current i d (a) pulse test case temperature tc ( c) static drain to source on state resistance r ds(on) (?) static drain to source on state resistance vs. temperature pulse test drain current i d (a) forward transfer admittance vs. drain current forward transfer admittance |yfs| (s) ds v = 10 v pulse test
h5n3003p rev.2.00, aug.01.2003, page 6 of 9 switching time t (ns) drain current i d (a) switching characteristics typical capacitance vs. drain to source voltage capacitance c (pf) drain to source voltage v ds (v) 0.1 0.3 1 3 10 30 100 1000 200 500 100 20 50 10 0 20 40 60 80 100 20000 50000 10000 1000 2000 5000 500 400 300 200 100 0 20 16 12 8 4 40 80 120 160 200 0 10000 1000 10 100 0.1 0.3 1 3 10 30 100 200 500 100 50 v = 50 v 100 v 240 v ds v = 0 f = 1 mhz gs ciss coss crss i = 40 a d v dd v gs body-drain diode reverse recovery time di / dt = 100 a / s v = 0, ta = 25 c gs v = 240 v 100 v 50 v ds r t d(on) t d(off) t t f v = 10 v, v = 150 v pw = 10 s, duty < 1 % r =10 ? gs dd g r t reverse drain current i dr (a) reverse recovery time trr (ns) gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) dynamic input characteristics t f
h5n3003p rev.2.00, aug.01.2003, page 7 of 9 0 0.4 0.8 1.2 1.6 2.0 100 80 60 40 20 5 4 3 2 1 -50 0 50 100 150 200 0 case temperature tc ( c) gate to source cutoff voltage vs. case temperature gate to source cutoff voltage v (v) gs(off) v = 10 v ds vin monitor d.u.t. vin 10 v r l v = 150 v dd tr td(on) vin 90% 90% 10% 10% vout td(off) vout monitor 10 ? 90% 10% t f source to drain voltage v sd (v) reverse drain current i dr (a) reverse drain current vs. source to drain voltage pulse test switching time test circuit waveform v = 0 v gs 10 v 5 v i = 10ma d 1ma 0.1ma
h5n3003p rev.2.00, aug.01.2003, page 8 of 9 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m 100 m 1 10 dm p pw t d = pw t ch ? c(t) = s (t) ch ? c ch ? c = 0.833 c/w, tc = 25 c tc = 25 c d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse pulse width pw ( s ) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width
h5n3003p rev.2.00, aug.01.2003, page 9 of 9 package dimensions 3.2 0.2 4.8 0.2 1.5 0.3 2.8 0.6 0.2 1.0 0.2 18.0 0.5 19.9 0.2 15.6 0.3 0.5 1.0 5.0 0.3 1.6 1.4 max 2.0 2.0 14.9 0.2 3.6 0.9 1.0 5.45 0.5 5.45 0.5 package code jedec jeita mass (reference value) to-3p ? conforms 5.0 g as of january, 2003 unit: mm
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